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KAIST Develops OLED Technology with Double the Screen Brightness
<(From Left) Ph.D candidate Minjae Kim, Professor Seunghyup Yoo, Dr. Junho Kim>
Organic light-emitting diodes (OLEDs) are widely used in smartphones and TVs thanks to their excellent color reproduction and thin, flexible planar structure. However, internal light loss has limited further improvements in brightness. KAIST researchers have now developed a technology that more than doubles OLED light-emission efficiency while maintaining the flat structure that is a key advantage of OLED displays.
KAIST (President Kwang Hyung Lee) announced on the 11th of January that a research team led by Professor Seunghyup Yoo of the School of Electrical Engineering has developed a new near-planar light outcoupling structure* and an OLED design method that can significantly reduce light loss inside OLED devices.* Near-planar light outcoupling structure: a thin structure that keeps the OLED surface almost flat while extracting more of the light generated inside to the outside
OLEDs are composed of multiple layers of ultrathin organic films stacked on top of one another. As light passes through these layers, it is repeatedly reflected or absorbed, often causing more than 80% of the light generated inside the OLED to be lost as heat before it can escape.
To address this issue, light outcoupling structures such as hemispherical lenses or microlens arrays (MLAs) have been used to extract light from OLEDs. However, hemispherical lenses protrude significantly, making it difficult to maintain a flat form factor, while MLAs must cover much larger area than individual pixel sizes to achieve sufficient light extraction. This creates limitations in achieving high efficiency without interference between neighboring pixels.
To increase OLED brightness while preserving a planar structure, the research team proposed a new OLED design strategy that maximizes light extraction within the size of each individual pixel.
Unlike conventional designs that assume OLEDs extend infinitely, this approach takes into account the finite pixel sizes actually used in real displays. As a result, more light can be emitted externally even from pixels of the same size.
In addition, the team developed a new near-planar light outcoupling structure that helps light emerge efficiently in the forward direction without being spread too widely. This structure is very thin—comparable in thickness to existing microlens arrays—yet achieves light extraction efficiency close to that of hemispherical lenses of the same lateral dimension. As a result, it hardly undermines the flat form factors of OLEDs and can be readily applied to flexible OLED displays.
By combining the new OLED design with the near-planar light outcoupling structure, the researchers successfully achieved more than a twofold improvement in light-emission efficiency even in small pixels.
< Quasi-Planar Light Extraction OLED Technology >
This technology enables brighter displays using the same power while maintaining OLED’s flat structure, and is expected to extend battery life and reduce heat generation in mobile devices such as smartphones and tablets. Improvements in display lifespan are also anticipated.
MinJae Kim, the first author of the study, noted, “A small idea that came up during class was developed into real research results through the KAIST Undergraduate Research Program (URP).”
Professor Seunghyup Yoo stated, “Although many light outcoupling structures have been proposed, most were designed for large-area lighting applications, and many were difficult to apply effectively to displays composed of numerous small pixels,” adding, “The near-planar light outcoupling structure proposed in this work was designed with constraints on the size of the light source within each pixel, reducing optical interference between adjacent pixels while maximizing efficiency.” He further emphasized that the approach can be applied not only to OLEDs but also to next-generation display technologies based on materials such as perovskites and quantum dots.
< Schematic Overview and Application Examples of the Proposed Light Extraction Structure >
This research, with MinJae Kim (Department of Materials Science and Engineering, KAIST; currently a Ph.D. student in Materials Science and Engineering at Stanford University) and Junho Kim (School of Electrical Engineering, KAIST; currently a postdoctoral researcher at the University of Cologne, Germany) as co–first authors, was published online on December 29, 2025, in Nature Communications.
※ Paper title: “Near-planar light outcoupling structures with finite lateral dimensions for ultra-efficient and optical crosstalk-free OLED displays” DOI: 10.1038/s41467-025-66538-6
This research was supported by the KAIST Undergraduate Research Program (URP), the Mid-Career Researcher Program and the Future Display Strategic Research Lab Program of the National Research Foundation (NRF) of Korea, the Human Resource Development Program of the Korea Institute for Advancement of Technology (KIAT), and the Korea Planning & Evaluation Institute of Industrial Technology (KEIT).
2026.01.12 View 5920 -
Nanowire Made of Diverse Materials May Become Marketable
- Technology to commercialize nanowire developed after 2 years of industrial-academic joint research -
- 2 million strands of 50nm-width, 20 cm-length nanowire mass producible in 2 hours –
A South Korean joint industrial-academic research team has developed the technology to put forward the commercialization of nanowire that is only a few nanometers wide. It is expected to be applied in various fields such as semiconductors, high performance sensors, and biodevices.
In cooperation with LG Innotek and the National Nanofab center, Professor Jun-Bo Yoon, from KAIST Department of Electrical Engineering, developed the technology to mass produce nanowire at any length with various materials. The research results are published on the online edition of Nano Letters on July 30th.
Nanowire has a long linear structure with its width at 100 nanometers at maximum. It is a multifunctional material that has yet undiscovered thermal, electric, and mechanical properties. Nanowire is highly acclaimed as a cutting-edge material with unique nano-level properties that can be applied in semiconductors, energy, biodevices, and optic devices.
Previously, nanowires had an extremely low synthesis rate that required three or four days to grow few millimeters. It was therefore difficult to produce the desired products using nanowires. Moreover, nanowires needed to be evenly arranged for practical application, but the traditional technology required complex post-treatment, not to mention the arrangement was not immaculate.
The research team applied semiconductor process instead of chemical synthesis to resolve these issues. The team first formed a pattern greater that of the target frequency by using a photo-engraving process on a silicon wafer board whose diameter was 20 centimeters, then repeatedly reduced the frequency to produce 100 nm ultrafine linear grid pattern. Based on this pattern, the research team applied the sputtering process to mass-produce nanowires in perfect shapes of 50 nm width and 20 cm maximum length.
The new technology requires neither a lengthy synthesis process nor post-cleaning to attain a perfectly aligned state. Thus, academic and industrial circles consider the technology has high possibilities for commercialization.
“The significance is in resolving the issues in traditional technology, such as low productivity, long manufacturing time, restrictions in material synthesis, and nanowire alignment,” commented Professor Yoon on this research. “Nanowires have not been widely applied in the industry, but this technology will bring forward the commercialization of high performance semiconductors, optic devices, and biodevices that make use of nanowires.”
2013.10.18 View 15339