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KAIST Reveals the Orbital Principle of Electron Motion for Realizing Memory of Dreams
<(From Left) Dr. Geun-Hee Lee, Professor Kyung-Jin Lee, Professor Kyoung-Whan Kim>
Research is actively underway to develop a “dream memory” that can reduce heat generation in smartphones and laptops while delivering faster performance and lower power consumption. Korean researchers have now proposed a new possibility for controlling magnetism using the exchange interaction of electron orbitals—the motion of electrons orbiting around an atomic nucleus—rather than relying on the conventional exchange interaction of electron spin, the rotational property of electrons inside semiconductors.
KAIST (President Kwang Hyung Lee) announced on the 16th of March that a joint research team led by Professor Kyung-Jin Lee of the Department of Physics at KAIST and Professor Kyoung-Whan Kim of the Department of Physics at Yonsei University (President Dong-Sup Yoon) has established, for the first time in the world, a new theoretical framework enabling magnetism to be freely controlled through orbital exchange interaction*, surpassing the limitations of conventional technologies that control magnetism using electric currents.*Orbital exchange interaction: a phenomenon in which the orbitals formed by electrons moving around an atomic nucleus interact with one another, thereby influencing the direction or properties of magnetism.
Until now, next-generation memory research has mainly focused on the spin of electrons. Spin refers to the property of electrons that rotate on their own axis like tiny spinning tops, and information can be stored by using the direction of this rotation. However, electrons simultaneously move around the atomic nucleus along paths known as orbitals. In this study, the research team theoretically demonstrated that when electric current flows, the orbital energy of electrons interacts directly with the orbitals of magnetic materials, enabling the transmission of information. Through this mechanism, they confirmed that the properties of magnets can be altered much more efficiently than with conventional spin-based approaches.
The most significant outcome of this research is the discovery that electric current does not merely change the direction of a magnet but can also modify the intrinsic properties of the magnet itself, such as the magnetic anisotropy (a magnet’s preferred direction) and rotational characteristics.
In particular, calculations by the research team showed that orbital-based control effects could be significantly stronger than existing spin-based methods. This finding suggests the possibility of a future era of orbital-based electronic devices, in which orbitals rather than spin play the central role in semiconductor components. The researchers also proposed practical experimental methods to measure these effects, which is expected to increase the potential for industrial applications.
The principle may also apply to altermagnetic materials, which have recently attracted significant attention in academia. Altermagnetism refers to a new form of magnetic material in which electron spins within atoms are arranged in alternating directions in an ordered pattern. Although these materials do not appear magnetic externally, they strongly influence electron motion. Because of this property, they allow precise control of electron states and are considered promising for high-speed, low-power semiconductor devices and next-generation memory technologies. The study therefore provides a strong theoretical foundation for developing future logic and memory devices.
Dr. Geun-Hee Lee stated, “This study demonstrates that controlling magnetism with electric current does not necessarily have to rely solely on spin. A new perspective—understanding and controlling magnetism using the orbital motion of electrons—will become an important milestone for the development of next-generation ultra-fast, low-power memory.”
In this research, Dr. Geun-Hee Lee (KAIST) participated as the first author, while Professor Kyoung-Whan Kim (Yonsei University) and Professor Kyung-Jin Lee (KAIST) served as co-corresponding authors. The results were published on February 2 in the internationally renowned journal Nature Communications, recognizing the academic significance of the work.
※ Paper title: “Orbital exchange-mediated current control of magnetism,” DOI: https://doi.org/10.1038/s41467-026-68846-x
This research was supported by the Frontier Challenge R&D Project, the Mid-Career Researcher Program, the Science Research Center (SRC) program, the Early Career Researcher Program of the National Research Foundation of Korea, and Samsung Electronics.
2026.03.16 View 3865 -
Professor Kyung-Jin Lee of the Department of Physics Selected for the KAISTian of the Year’ Award
< Professor Kyung-Jin Lee at the ceremony >
KAIST announced on February 12th that it has selected Professor Kyung-Jin Lee from the Department of Physics as the recipient of the ‘KAISTian of the Year’ award in celebration of the university's 55th anniversary. Established in 2001, the ‘KAISTian of the Year’ award is the university’s highest honor, presented to members who have significantly enhanced KAIST's global prestige through exceptional academic and research milestones.
As the 25th recipient of this award, Professor Kyung-Jin Lee was recognized for his groundbreaking work in identifying the phenomenon of ‘Quantum Spin Pumping,’ effectively overturning 30-year-old conventional assumptions in spin transfer theory. While existing theories treated spin as a classical physical quantity, Professor Lee focused on the fact that spins within materials possess intrinsic quantum properties, much like electrons. To verify this, he researched Iron-Rhodium (FeRh), a magnetic material where spin magnitude changes abruptly under specific conditions. He became the first to observe a quantum transition in which the spin magnitude of Rhodium (Rh) atoms increased suddenly rather than gradually, theorizing that this very change serves as a new mechanism for inducing electron movement. Experimental data showed that this effect is more than 10 times greater than what previous theories had predicted. This achievement is hailed as a major breakthrough that redefines the core premises of spin transfer theory and provides a vital theoretical foundation for next-generation ultra-low-power magnetic memory and quantum information devices. The study gained worldwide acclaim following its publication in the journal ‘Nature’ last year.
The anniversary ceremony also honored 58 faculty members for their excellence in education, research, and international cooperation. Professor Wonho Choe of the Department of Nuclear and Quantum Engineering received the ‘Academic Achievement Grand Prize’ for his world-first identification of physical phenomena in low-temperature atmospheric pressure plasma and his contributions to medical and space technologies. The ‘Creative Teaching Grand Prize’ went to Professor Hyung-soo Kim of the Department of Mechanical Engineering for his innovative sports fluid mechanics curriculum. Professor Park Bum-soon of the Graduate School of Science and Technology Policy was awarded the ‘Outstanding Teaching Grand Prize’ for his interdisciplinary ‘Anthropocene Humanities’ courses that bridge science, art, and policy.
Furthermore, Professor Hyeon-Min Bae of the School of Electrical Engineering received the ‘Distinguished Service Grand Prize’ for his leadership in accelerating deep-tech prototyping and fostering a robust startup ecosystem. Professor Shin-Hyun Kim of the Department of Chemical and Biomolecular Engineering was honored with the ‘International Cooperation Grand Prize’ for establishing the T2KN consortium between Korea, Japan, China, and ASEAN, facilitating global academic exchange for over 120 students.
KAIST President Kwang-Hyung Lee stated, “The true spirit of KAIST lies in the dedication of our members who venture into uncharted territories and strive to transcend existing limits. I hope today serves as a moment for all our members to share in the joy and celebrate the remarkable achievements of our awardees.”
2026.02.12 View 3765