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Breaking the 1% Barrier, KAIST Boosts Brightness of Eco-Friendly Ultra-Small Semiconductors by 18-Fold
<(Front rwo, from left) KAIST co-first author Changhyun Joo, co-first author Seongbeom Yeon, (Back row, from left) Jaeyoung Ha, Professor Himchan Cho, Jaedong Jang>
Light-emitting semiconductors are used throughout everyday life in TVs, smartphones, and lighting. However, many technical barriers remain in developing environmentally friendly semiconductor materials. In particular, nanoscale semiconductors that are tens of thousands of times smaller than the width of a human hair (about 100,000 nanometers) are theoretically capable of emitting bright light, yet in practice have suffered from extremely weak emission. KAIST researchers have now developed a new surface-control technology that overcomes this limitation.
KAIST (President Kwang Hyung Lee) announced on the 14th of January that a research team led by Professor Himchan Cho of the Department of Materials Science and Engineering has developed a fundamental technology to control, at the atomic level, the surface of indium phosphide (InP)* magic-sized clusters (MSCs)—nanoscale semiconductor particles regarded as next-generation eco-friendly semiconductor materials.* Indium phosphide (InP): a compound semiconductor made of indium (In) and phosphorus (P), considered an environmentally friendly alternative that does not use hazardous elements such as cadmium
The material studied by the team is known as a magic-sized cluster, an ultrasmall semiconductor particle composed of only several tens of atoms. Because all particles have identical size and structure, these materials are theoretically capable of emitting extremely sharp and pure light. However, due to their extremely small size of just 1–2 nanometers, even minute surface defects cause most of the emitted light to be lost. As a result, luminescence efficiency has remained below 1% to date.
Previously, this issue was addressed by etching the surface with strong chemicals such as hydrofluoric acid (HF). However, the overly aggressive reactions often damaged the semiconductor itself.
Professor Cho’s team adopted a different approach. Instead of removing the surface all at once, they devised a precision etching strategy that allows chemical reactions to proceed in a highly controlled, incremental manner. This enabled selective removal of only the defect sites that hindered light emission, while preserving the overall structure of the semiconductor. During this defect-removal process, fluorine generated by the reaction combined with zinc species in the solution to form zinc chloride, which in turn stabilized and passivated the exposed nanocrystal surface.
< Schematic illustration of overcoming emission efficiency limits via atomic-scale precision control >
As a result, the research team increased the luminescence efficiency of the semiconductor from below 1% to 18.1%. This represents the highest reported performance to date among indium phosphide–based ultrasmall nanosemiconductors, corresponding to an 18-fold increase in brightness.
This study is particularly significant in that it demonstrates, for the first time, that the surfaces of ultrasmall semiconductors—previously considered nearly impossible to control—can be precisely engineered at the atomic level. The technology is expected to find applications not only in next-generation displays, but also in advanced fields such as quantum communication and infrared sensing.
< Eco-friendly Ultra-compact Semiconductor Chemical Reaction (AI-generated image) >
Professor Himchan Cho explained, “This work is not simply about making brighter semiconductors, but about demonstrating how critical atomic-level surface control is for achieving desired performance.”
This research was carried out with Changhyun Joo, a doctoral student, and Seongbeom Yeon, a combined master’s-doctoral student in the Department of Materials Science and Engineering at KAIST, serving as co–first authors. Professor Himchan Cho and Professor Ivan Infante of the Basque Center for Materials, Applications, and Nanostructures (BCMaterials, Spain) participated as co-corresponding authors. The study was published online on December 16 in the Journal of the American Chemical Society (JACS), one of the most prestigious journals in chemistry.
※ Paper title: “Overcoming the Luminescence Efficiency Limitations of InP Magic-Sized Clusters,” DOI: 10.1021/jacs.5c13963
This research was supported by the National Research Foundation of Korea through the Nano Materials Technology Development Program, the Next-Generation Intelligent Semiconductor Technology Development Program, the Quantum Information Science Human Infrastructure Program, and by the Korea Basic Science Institute through its Infrastructure Support Program for Early-Career Researchers.
2026.01.14 View 1135 -
KAIST Develops OLED Technology with Double the Screen Brightness
<(From Left) Ph.D candidate Minjae Kim, Professor Seunghyup Yoo, Dr. Junho Kim>
Organic light-emitting diodes (OLEDs) are widely used in smartphones and TVs thanks to their excellent color reproduction and thin, flexible planar structure. However, internal light loss has limited further improvements in brightness. KAIST researchers have now developed a technology that more than doubles OLED light-emission efficiency while maintaining the flat structure that is a key advantage of OLED displays.
KAIST (President Kwang Hyung Lee) announced on the 11th of January that a research team led by Professor Seunghyup Yoo of the School of Electrical Engineering has developed a new near-planar light outcoupling structure* and an OLED design method that can significantly reduce light loss inside OLED devices.* Near-planar light outcoupling structure: a thin structure that keeps the OLED surface almost flat while extracting more of the light generated inside to the outside
OLEDs are composed of multiple layers of ultrathin organic films stacked on top of one another. As light passes through these layers, it is repeatedly reflected or absorbed, often causing more than 80% of the light generated inside the OLED to be lost as heat before it can escape.
To address this issue, light outcoupling structures such as hemispherical lenses or microlens arrays (MLAs) have been used to extract light from OLEDs. However, hemispherical lenses protrude significantly, making it difficult to maintain a flat form factor, while MLAs must cover much larger area than individual pixel sizes to achieve sufficient light extraction. This creates limitations in achieving high efficiency without interference between neighboring pixels.
To increase OLED brightness while preserving a planar structure, the research team proposed a new OLED design strategy that maximizes light extraction within the size of each individual pixel.
Unlike conventional designs that assume OLEDs extend infinitely, this approach takes into account the finite pixel sizes actually used in real displays. As a result, more light can be emitted externally even from pixels of the same size.
In addition, the team developed a new near-planar light outcoupling structure that helps light emerge efficiently in the forward direction without being spread too widely. This structure is very thin—comparable in thickness to existing microlens arrays—yet achieves light extraction efficiency close to that of hemispherical lenses of the same lateral dimension. As a result, it hardly undermines the flat form factors of OLEDs and can be readily applied to flexible OLED displays.
By combining the new OLED design with the near-planar light outcoupling structure, the researchers successfully achieved more than a twofold improvement in light-emission efficiency even in small pixels.
< Quasi-Planar Light Extraction OLED Technology >
This technology enables brighter displays using the same power while maintaining OLED’s flat structure, and is expected to extend battery life and reduce heat generation in mobile devices such as smartphones and tablets. Improvements in display lifespan are also anticipated.
MinJae Kim, the first author of the study, noted, “A small idea that came up during class was developed into real research results through the KAIST Undergraduate Research Program (URP).”
Professor Seunghyup Yoo stated, “Although many light outcoupling structures have been proposed, most were designed for large-area lighting applications, and many were difficult to apply effectively to displays composed of numerous small pixels,” adding, “The near-planar light outcoupling structure proposed in this work was designed with constraints on the size of the light source within each pixel, reducing optical interference between adjacent pixels while maximizing efficiency.” He further emphasized that the approach can be applied not only to OLEDs but also to next-generation display technologies based on materials such as perovskites and quantum dots.
< Schematic Overview and Application Examples of the Proposed Light Extraction Structure >
This research, with MinJae Kim (Department of Materials Science and Engineering, KAIST; currently a Ph.D. student in Materials Science and Engineering at Stanford University) and Junho Kim (School of Electrical Engineering, KAIST; currently a postdoctoral researcher at the University of Cologne, Germany) as co–first authors, was published online on December 29, 2025, in Nature Communications.
※ Paper title: “Near-planar light outcoupling structures with finite lateral dimensions for ultra-efficient and optical crosstalk-free OLED displays” DOI: 10.1038/s41467-025-66538-6
This research was supported by the KAIST Undergraduate Research Program (URP), the Mid-Career Researcher Program and the Future Display Strategic Research Lab Program of the National Research Foundation (NRF) of Korea, the Human Resource Development Program of the Korea Institute for Advancement of Technology (KIAT), and the Korea Planning & Evaluation Institute of Industrial Technology (KEIT).
2026.01.12 View 1415