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KAIST Develops Semiconductor Neuron That Tunes Noise to Selectively Process Signals
In electronic devices, irregular fluctuations in signals are generally referred to as “noise.” Because noise interferes with accurate information processing, conventional semiconductor technology has mainly treated it as something to be reduced or eliminated. However, neurons in the human brain do not respond in exactly the same way every time, even to the same stimulus. Tiny internal variations in neurons change when and how often neurons are fired, and this probabilistic operation is one of the brain’s key information-processing features. Inspired by this, KAIST researchers have developed a next-generation semiconductor technology that does not remove current noise generated in memristors, but instead tunes it to a desired level and uses it to process different types of signals.
KAIST (President Choongsik Bae) announced on the August 16 that a research team led by Professor Kyung Min Kim from the Department of Materials Science and Engineering has developed a new neuromorphic neuron technology that uses noise generated in semiconductor devices for information processing, enabling selective encoding of time-series signals across different frequency bands.
※ Neuromorphic technology: A technology that processes information by mimicking the way the human brain and neurons operate.
In general, noise generated in semiconductors is regarded as an obstacle to accurate signal processing. For this reason, most electronic devices are designed to reduce or eliminate noise as much as possible. The human brain, however, works differently. Neurons, the nerve cells of the brain, do not always respond in the same way to the same stimulus because of internal probabilistic fluctuations. This irregularity actually helps the brain flexibly respond to a wide range of situations and sensory signals.
The research team used a memristor in this study. A memristor is a semiconductor device that changes its resistance state in response to electrical stimulation and remembers that state. Until now, current noise generated in memristors has mainly been used for random number generation, which creates unpredictable numbers, or for probabilistic computing.
However, previous studies have largely focused on using the inherent randomness of memristors as it is. Technologies that can tune probabilistic response characteristics according to need had not been sufficiently realized.
The key insight of this study is that when the resistance state of a memristor is changed, the magnitude and behavior of its current noise also change. By presetting the resistance state of the memristor, the probability of spike generation and the response range can vary even under the same input. Using this principle, the research team implemented a “programmable probabilistic neuron (PPN)” that treats noise not simply as instability, but as an information-processing resource that can be tuned in a desired way.
This neuron can be configured to respond differently depending on how rapidly an input signal changes, in other words, its frequency. By changing only the resistance state of the memristor, the same circuit can be switched to respond sensitively to slow human activity signals in the hertz (Hz) range or fast speech signals in the kilohertz (kHz) range. Hz and kHz are units that indicate how many times a signal repeats per second, with 1 kHz equal to 1,000 Hz.
In simple terms, a single artificial neuron can be reconfigured according to the speed of the signal it needs to process. When processing slowly changing signals such as human movement, it can operate in a way suited to slow variations; when processing rapidly changing signals such as speech, it can be adjusted to capture short and fast changes effectively.
The research team verified the technology using signals with different frequency ranges. The system encoded and classified human activity signals in the Hz range and speech signals in the kHz range, achieving accuracies of 94.8% in human activity recognition and 95.0% in speech recognition.
Professor Kyung Min Kim said, “The significance of this study lies in demonstrating that memristor noise can be harnessed as a tunable information-processing resource, rather than simply treated as an error or instability,” adding, “Because the same hardware can be reconfigured for signals of different speeds and frequencies, it could be used as a signal-processing technology for future low-power edge neuromorphic systems.”
This study was led by Dr. Do Hoon Kim from the Department of Materials Science and Engineering as first author, and was published in the internationally renowned materials science journal Advanced Materials on August 05.
Paper title: Noise-Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency-Selective Time-Series Signal Encoding,
DOI: https://doi.org/10.1002/adma.74529
This research was supported by the Basic Research Program in Science and Engineering and the PIM Artificial Intelligence Semiconductor Core Technology Development Program of the Ministry of Science and ICT and the National Research Foundation of Korea.
2026.08.18 View 1075 -
KAIST researchers developed a novel ultra-low power memory for neuromorphic computing
A team of Korean researchers is making headlines by developing a new memory device that can be used to replace existing memory or used in implementing neuromorphic computing for next-generation artificial intelligence hardware for its low processing costs and its ultra-low power consumption.
KAIST (President Kwang-Hyung Lee) announced on April 4th that Professor Shinhyun Choi's research team in the School of Electrical Engineering has developed a next-generation phase change memory* device featuring ultra-low-power consumption that can replace DRAM and NAND flash memory.
☞ Phase change memory: A memory device that stores and/or processes information by changing the crystalline states of materials to be amorphous or crystalline using heat, thereby changing its resistance state.
Existing phase change memory has the problems such as expensive fabrication process for making highly scaled device and requiring substantial amount of power for operation. To solve these problems, Professor Choi’s research team developed an ultra-low power phase change memory device by electrically forming a very small nanometer (nm) scale phase changeable filament without expensive fabrication processes. This new development has the groundbreaking advantage of not only having a very low processing cost but also of enabling operating with ultra-low power consumption.
DRAM, one of the most popularly used memory, is very fast, but has volatile characteristics in which data disappears when the power is turned off. NAND flash memory, a storage device, has relatively slow read/write speeds, but it has non-volatile characteristic that enables it to preserve the data even when the power is cut off.
Phase change memory, on the other hand, combines the advantages of both DRAM and NAND flash memory, offering high speed and non-volatile characteristics. For this reason, phase change memory is being highlighted as the next-generation memory that can replace existing memory, and is being actively researched as a memory technology or neuromorphic computing technology that mimics the human brain.
However, conventional phase change memory devices require a substantial amount of power to operate, making it difficult to make practical large-capacity memory products or realize a neuromorphic computing system. In order to maximize the thermal efficiency for memory device operation, previous research efforts focused on reducing the power consumption by shrinking the physical size of the device through the use of the state-of-the-art lithography technologies, but they were met with limitations in terms of practicality as the degree of improvement in power consumption was minimal whereas the cost and the difficulty of fabrication increased with each improvement.
In order to solve the power consumption problem of phase change memory, Professor Shinhyun Choi’s research team created a method to electrically form phase change materials in extremely small area, successfully implementing an ultra-low-power phase change memory device that consumes 15 times less power than a conventional phase change memory device fabricated with the expensive lithography tool.
< Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device compared to conventional phase change memory devices. >
Professor Shinhyun Choi expressed strong confidence in how this research will span out in the future in the new field of research saying, "The phase change memory device we have developed is significant as it offers a novel approach to solve the lingering problems in producing a memory device at a greatly improved manufacturing cost and energy efficiency. We expect the results of our study to become the foundation of future electronic engineering, enabling various applications including high-density three-dimensional vertical memory and neuromorphic computing systems as it opened up the possibilities to choose from a variety of materials.” He went on to add, “I would like to thank the National Research Foundation of Korea and the National NanoFab Center for supporting this research.”
This study, in which See-On Park, a student of MS-PhD Integrated Program, and Seokman Hong, a doctoral student of the School of Electrical Engineering at KAIST, participated as first authors, was published on April 4 in the April issue of the renowned international academic journal Nature. (Paper title: Phase-Change Memory via a Phase-Changeable Self-Confined Nano-Filament)
This research was conducted with support from the Next-Generation Intelligent Semiconductor Technology Development Project, PIM AI Semiconductor Core Technology Development (Device) Project, Excellent Emerging Research Program of the National Research Foundation of Korea, and the Semiconductor Process-based Nanomedical Devices Development Project of the National NanoFab Center.
2024.04.04 View 16779 -
KAIST Team Develops an Insect-Mimicking Semiconductor to Detect Motion
The recent development of an “intelligent sensor” semiconductor that mimics the optic nerve of insects while operating at ultra-high speeds and low power offers extensive expandability into various innovative technologies. This technology is expected to be applied to various fields including transportation, safety, and security systems, contributing to both industry and society.
On February 19, a KAIST research team led by Professor Kyung Min Kim from the Department of Materials Science and Engineering (DMSE) announced the successful developed an intelligent motion detector by merging various memristor* devices to mimic the visual intelligence** of the optic nerve of insects.
*Memristor: a “memory resistor” whose state of resistance changes depending on the input signal
**Visual intelligence: the ability to interpret visual information and perform calculations within the optic nerve
With the recent advances in AI technology, vision systems are being improved by utilizing AI in various tasks such as image recognition, object detection, and motion analysis. However, existing vision systems typically recognize objects and their behaviour from the received image signals using complex algorithms. This method requires a significant amount of data traffic and higher power consumption, making it difficult to apply in mobile or IoT devices.
Meanwhile, insects are known to be able to effectively process visual information through an optic nerve circuit called the elementary motion detector, allowing them to detect objects and recognize their motion at an advanced level. However, mimicking this pathway using conventional silicon integrated circuit (CMOS) technology requires complex circuits, and its implementation into actual devices has thus been limited.
< Figure 1. Working principle of a biological elementary motion detection system. >
Professor Kyung Min Kim’s research team developed an intelligent motion detecting sensor that operates at a high level of efficiency and ultra-high speeds. The device has a simple structure consisting of only two types of memristors and a resistor developed by the team. The two different memristors each carry out a signal delay function and a signal integration and ignition function, respectively. Through them, the team could directly mimic the optic nerve of insects to analyze object movement.
< Figure 2. (Left) Optical image of the M-EMD device in the left panel (scale bar 200 μm) and SEM image of the device in the right panel (scale bar: 20 μm). (Middle) Responses of the M-EMD in positive direction. (Right) Responses of the M-EMD in negative direction. >
To demonstrate its potential for practical applications, the research team used the newly developed motion detector to design a neuromorphic computing system that can predict the path of a vehicle. The results showed that the device used 92.9% less energy compared to existing technology and predicted motion with more accuracy.
< Figure 3. Neuromorphic computing system configuration based on motion recognition devices >
Professor Kim said, “Insects make use of their very simple visual intelligence systems to detect the motion of objects at a surprising high speed. This research is significant in that we could mimic the functions of a nerve using a memristor device.” He added, “Edge AI devices, such as AI-topped mobile phones, are becoming increasingly important. This research can contribute to the integration of efficient vision systems for motion recognition, so we expect it to be applied to various fields such as autonomous vehicles, vehicle transportation systems, robotics, and machine vision.”
This research, conducted by co-first authors Hanchan Song and Min Gu Lee, both Ph.D. candidates at KAIST DMSE, was published in the online issue of Advanced Materials on January 29.
This research was supported by the Mid-Sized Research Project by the National Research Foundation of Korea, the Next-Generation Intelligent Semiconductor Technology Development Project, the PIM Artificial Intelligence Semiconductor Core Technology Development Project, the National Nano Fab Center, and the Leap Research Project by KAIST.
2024.02.29 View 15100 -
Professor Shinhyun Choi’s team, selected for Nature Communications Editors’ highlight
[ From left, Ph.D. candidates See-On Park and Hakcheon Jeong, along with Master's student Jong-Yong Park and Professor Shinhyun Choi ]
See-On Park, Hakcheon Jeong, Jong-Yong Park - a team of researchers under the leadership of Professor Shinhyun Choi of the School of Electrical Engineering, developed a highly reliable variable resistor (memristor) array that simulates the behavior of neurons using a metal oxide layer with an oxygen concentration gradient, and published their work in Nature Communications. The study was selected as the Nature Communications' Editor's highlight, and as the featured article posted on the main page of the journal's website.
Link : https://www.nature.com/ncomms/
[ Figure 1. The featured image on the main page of the Nature Communications' website introducing the research by Professor Choi's team on the memristor for artificial neurons ]
Thesis title: Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing.
( https://doi.org/10.1038/s41467-022-30539-6 )
At KAIST, their research was introduced on the 2022 Fall issue of Breakthroughs, the biannual newsletter published by KAIST College of Engineering.
This research was conducted with the support from the Samsung Research Funding & Incubation Center of Samsung Electronics.
2022.11.01 View 17992 -
Neuromorphic Memory Device Simulates Neurons and Synapses
Simultaneous emulation of neuronal and synaptic properties promotes the development of brain-like artificial intelligence
Researchers have reported a nano-sized neuromorphic memory device that emulates neurons and synapses simultaneously in a unit cell, another step toward completing the goal of neuromorphic computing designed to rigorously mimic the human brain with semiconductor devices.
Neuromorphic computing aims to realize artificial intelligence (AI) by mimicking the mechanisms of neurons and synapses that make up the human brain. Inspired by the cognitive functions of the human brain that current computers cannot provide, neuromorphic devices have been widely investigated. However, current Complementary Metal-Oxide Semiconductor (CMOS)-based neuromorphic circuits simply connect artificial neurons and synapses without synergistic interactions, and the concomitant implementation of neurons and synapses still remains a challenge. To address these issues, a research team led by Professor Keon Jae Lee from the Department of Materials Science and Engineering implemented the biological working mechanisms of humans by introducing the neuron-synapse interactions in a single memory cell, rather than the conventional approach of electrically connecting artificial neuronal and synaptic devices.
Similar to commercial graphics cards, the artificial synaptic devices previously studied often used to accelerate parallel computations, which shows clear differences from the operational mechanisms of the human brain. The research team implemented the synergistic interactions between neurons and synapses in the neuromorphic memory device, emulating the mechanisms of the biological neural network. In addition, the developed neuromorphic device can replace complex CMOS neuron circuits with a single device, providing high scalability and cost efficiency.
The human brain consists of a complex network of 100 billion neurons and 100 trillion synapses. The functions and structures of neurons and synapses can flexibly change according to the external stimuli, adapting to the surrounding environment. The research team developed a neuromorphic device in which short-term and long-term memories coexist using volatile and non-volatile memory devices that mimic the characteristics of neurons and synapses, respectively. A threshold switch device is used as volatile memory and phase-change memory is used as a non-volatile device. Two thin-film devices are integrated without intermediate electrodes, implementing the functional adaptability of neurons and synapses in the neuromorphic memory.
Professor Keon Jae Lee explained, "Neurons and synapses interact with each other to establish cognitive functions such as memory and learning, so simulating both is an essential element for brain-inspired artificial intelligence. The developed neuromorphic memory device also mimics the retraining effect that allows quick learning of the forgotten information by implementing a positive feedback effect between neurons and synapses.”
This result entitled “Simultaneous emulation of synaptic and intrinsic plasticity using a memristive synapse” was published in the May 19, 2022 issue of Nature Communications.
-Publication:Sang Hyun Sung, Tae Jin Kim, Hyera Shin, Tae Hong Im, and Keon Jae Lee (2022) “Simultaneous emulation of synaptic and intrinsic plasticity using a memristive synapse,” Nature Communications May 19, 2022 (DOI: 10.1038/s41467-022-30432-2)
-Profile:Professor Keon Jae Leehttp://fand.kaist.ac.kr
Department of Materials Science and EngineeringKAIST
2022.05.20 View 24768 -
Brain-Inspired Highly Scalable Neuromorphic Hardware Presented
Neurons and synapses based on single transistor can dramatically reduce the hardware cost and accelerate the commercialization of neuromorphic hardware
KAIST researchers fabricated a brain-inspired highly scalable neuromorphic hardware by co-integrating single transistor neurons and synapses. Using standard silicon complementary metal-oxide-semiconductor (CMOS) technology, the neuromorphic hardware is expected to reduce chip cost and simplify fabrication procedures.
The research team led by Yang-Kyu Choi and Sung-Yool Choi produced a neurons and synapses based on single transistor for highly scalable neuromorphic hardware and showed the ability to recognize text and face images. This research was featured in Science Advances on August 4.
Neuromorphic hardware has attracted a great deal of attention because of its artificial intelligence functions, but consuming ultra-low power of less than 20 watts by mimicking the human brain. To make neuromorphic hardware work, a neuron that generates a spike when integrating a certain signal, and a synapse remembering the connection between two neurons are necessary, just like the biological brain. However, since neurons and synapses constructed on digital or analog circuits occupy a large space, there is a limit in terms of hardware efficiency and costs. Since the human brain consists of about 1011 neurons and 1014 synapses, it is necessary to improve the hardware cost in order to apply it to mobile and IoT devices.
To solve the problem, the research team mimicked the behavior of biological neurons and synapses with a single transistor, and co-integrated them onto an 8-inch wafer. The manufactured neuromorphic transistors have the same structure as the transistors for memory and logic that are currently mass-produced. In addition, the neuromorphic transistors proved for the first time that they can be implemented with a ‘Janus structure’ that functions as both neuron and synapse, just like coins have heads and tails.
Professor Yang-Kyu Choi said that this work can dramatically reduce the hardware cost by replacing the neurons and synapses that were based on complex digital and analog circuits with a single transistor. "We have demonstrated that neurons and synapses can be implemented using a single transistor," said Joon-Kyu Han, the first author. "By co-integrating single transistor neurons and synapses on the same wafer using a standard CMOS process, the hardware cost of the neuromorphic hardware has been improved, which will accelerate the commercialization of neuromorphic hardware,” Han added.This research was supported by the National Research Foundation (NRF) and IC Design Education Center (IDEC).
-PublicationJoon-Kyu Han, Sung-Yool Choi, Yang-Kyu Choi, et al.“Cointegration of single-transistor neurons and synapses by nanoscale CMOS fabrication for highly scalable neuromorphic hardware,” Science Advances (DOI: 10.1126/sciadv.abg8836)
-ProfileProfessor Yang-Kyu ChoiNano-Oriented Bio-Electronics Labhttps://sites.google.com/view/nobelab/
School of Electrical EngineeringKAIST
Professor Sung-Yool ChoiMolecular and Nano Device Laboratoryhttps://www.mndl.kaist.ac.kr/
School of Electrical EngineeringKAIST
2021.08.05 View 19273